Demystifying DRAM Read Disturbance: RowHammer and RowPress Phenomena
The paper investigates DRAM read disturbance phenomena, focusing on RowHammer and RowPress, and highlights gaps between experimental observations and existing device-level models. It presents extensive TCAD simulations that align with empirical data and updates the understanding of underlying error mechanisms. The authors also discuss implications for more rigorous characterization methods and mitigation technique design.
- ▪RowHammer and RowPress cause unintended bitflips in DRAM when certain rows are repeatedly accessed.
- ▪Previous device-level models did not fully explain observed bitflip directions, counts, and activation thresholds.
- ▪The authors conducted TCAD simulations that reproduce experimental findings and identify critical modeling parameters.
- ▪The study proposes refined error mechanisms and suggests improvements for experimental methodologies and mitigation strategies.
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| Original publisher | arXiv.org |
| Canonical URL | https://arxiv.org/abs/2607.28233 |
| Publication time | Fri, 31 Jul 2026 20:44:29 +0000 |
| Retrieval time | 2026-07-31T21:18:36.205Z |
| Last seen | 2026-07-31T21:18:36.205Z |
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Computer Science > Hardware Architecture arXiv:2607.28233 (cs) [Submitted on 30 Jul 2026] Title:Demystifying DRAM Read Disturbance: Bridging the Gap Between Experimental Characterization and Device-Level Modeling of RowHammer and RowPress Phenomena Authors:Haocong Luo, Longda Zhou, Ataberk Olgun, İsmail Emir Yüksel, Nisa Bostanci, Zhigang Ji, Xing Wu, Onur Mutlu View a PDF of the paper titled Demystifying DRAM Read Disturbance: Bridging the Gap Between Experimental Characterization and Device-Level Modeling of RowHammer and RowPress Phenomena, by Haocong Luo and 7 other authors View PDF HTML (experimental) Abstract:DRAM read disturbance, like RowHammer and RowPress, is a critical robustness issue where accessing DRAM can cause unintended bitflips in other unaccessed DRAM locations.
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