Exploring denser on-chip AI memory with two-transistor gain cells
Gain Cell RAM (GCRAM) offers higher density, lower power, and tunable retention, expanding the design space beyond conventional SRAM. To this end, we create an OpenGCRAM compiler supporting both SRAM and GCRAM. It generates macro-level designs and layouts for commercial CMOS processes and characterizes area, delay, and power across user-defined configurations.
- ▪Gain Cell RAM (GCRAM) offers higher density, lower power, and tunable retention, expanding the design space beyond conventional SRAM.
- ▪To this end, we create an OpenGCRAM compiler supporting both SRAM and GCRAM.
- ▪It generates macro-level designs and layouts for commercial CMOS processes and characterizes area, delay, and power across user-defined configurations.
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| Original publisher | arXiv.org |
| Canonical URL | https://arxiv.org/abs/2602.21278 |
| Publication time | Sat, 12 Sep 2026 15:27:19 +0000 |
| Retrieval time | 2026-09-12T16:45:11.138Z |
| Last seen | 2026-09-12T16:45:26.608Z |
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Computer Science > Hardware Architecture arXiv:2602.21278 (cs) [Submitted on 24 Feb 2026] Title:Heterogeneous Memory Design Exploration for AI Accelerators with a Gain Cell Memory Compiler Authors:Xinxin Wang, Lixian Yan, Shuhan Liu, Luke Upton, Zhuoqi Cai, Yiming Tan, Shengman Li, Koustav Jana, Peijing Li, Jesse Cirimelli-Low, Thierry Tambe, Matthew Guthaus, H.-S. Philip Wong View a PDF of the paper titled Heterogeneous Memory Design Exploration for AI Accelerators with a Gain Cell Memory Compiler, by Xinxin Wang and 11 other authors View PDF HTML (experimental) Abstract:As memory increasingly dominates system cost and energy, heterogeneous on-chip memory systems that combine technologies with complementary characteristics are becoming essential.
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