Using Azo Photoisomerization to Alter Semiconductor Film Properties
Researchers have demonstrated that azobenzene compounds can optically alter the properties of semiconductor films when exposed to UV light. This technique allows for dynamic changes in carrier densities within transition metal dichalcogenide monolayers, effectively modifying the behavior of field-effect transistors. The proof-of-concept study suggests potential applications in developing programmable circuits and sensors that respond to external stimuli.
- ▪Exposing azobenzene compounds to UV light enables the optical alteration of semiconductor film properties.
- ▪The study utilized a transition metal dichalcogenide monolayer combined with the Azo compound to create a functional device.
- ▪Visible and UV light were used to alter carrier densities in both n-type and p-type FET semiconductors.
- ▪The research was published in Science Advances and covered by Princeton University.
- ▪This method offers a pathway to creating semiconductor devices whose behavior dynamically changes in response to electromagnetic radiation or temperature.
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| Original publisher | Hackaday |
| Canonical URL | https://hackaday.com/2026/09/19/using-azo-photoisomerization-to-alter-semiconductor-film-properties/ |
| Publication time | Sat, 19 Sep 2026 11:00:40 +0000 |
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Using Azo Photoisomerization To Alter Semiconductor Film Properties No comments by: Maya Posch September 19, 2026 Title: Copy Short Link: Copy Generally semiconductor devices like transistors have fixed properties, but using an azobenzene (Azo) compound it’s possible to optically alter these properties by exposing them to UV light. This is demonstrated in a recent paper by [Jaehoon Ji] et al., as published in Science Advances, with accompanying coverage by Princeton University. Building on previous research on e.g. flakes of MoS2 with photochromic Azo molecules, a functional semiconductor device was created. This uses a transition metal dichalcogenide (TMD) monolayer combined with the Azo compound, with the latter altering the electrical and optical properties of the structure.
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